Please use this identifier to cite or link to this item: http://digitalrepository.fccollege.edu.pk/handle/123456789/102
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dc.contributor.authorAhmad, Naveed-
dc.contributor.authorTian, Y. U.-
dc.contributor.authorkhan, Suleman-
dc.contributor.authorMajid, Abdul-
dc.contributor.authorIqbal, Javed-
dc.contributor.authorShah, Saqlain Abbas-
dc.contributor.authorAwan, S. U-
dc.contributor.authorHan, X. F.-
dc.date.accessioned2018-06-29T07:28:16Z-
dc.date.available2018-06-29T07:28:16Z-
dc.date.issued2017-02-01-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/102-
dc.descriptionAbstract The Co 40 Fe 40 B 20 thin films with varying thickness using silicon dioxide (SiO 2) as substrate were fabricated by magnetron sputtering system (ULVAC, Japan) with a base pressure P= 10− 8 Torr to understand magnetodynamic interactions and structural properties. The samples were characterized using X-band ferromagnetic resonance experiments at room temperature. The XRD pattern shows that the thin film is amorphous and we got a strong peak (400) of substrate silicon dioxide (SiO 2). The SEM result of Co 40 Fe 40 B 20 thin film demonstrates that it has uniform and homogeneous morphology. It has been observed from ferromagnetic resonance (FMR) results that the thin film depicts anisotropic behavior and easy axis lies out of the plane.en_US
dc.publisherSpringer USen_US
dc.relation.ispartofseriesVol 30: 2;469-473-
dc.subjectPhysicsen_US
dc.titleerromagnetic Relaxation and Magnetic Properties of Co 40 Fe 40 B 20 Thin Filmsen_US
dc.typeArticleen_US
Appears in Collections:Physics Department

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